Photoconductivity of (ZnS, CdSe): Dy
- 1 September 1987
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 22 (9) , 1179-1182
- https://doi.org/10.1002/crat.2170220916
Abstract
Photoconductivity rise and decay curves have been investigated for (ZnS, CdSe): Dy as a function of flux concentration, concentration of Dy, applied voltage, atmosphere during preparation and different excitation intensities. Substitution of Dy increases the photocurrent by five times. Maximum photocurrent is also observed at a particular concentration of flux. The decay is of hyperbolic nature and the trap depths are found at depths 0.49 eV and 0.54 eV which depend upon the concentration of Dy.Keywords
This publication has 1 reference indexed in Scilit:
- Photoconductivity of rare earth doped ZnOJournal of Materials Science Letters, 1986