Electronic properties of thin SiO 2 films deposited at low temperatures by new ECR microwave PECVD process
- 3 August 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (16) , 1088-1090
- https://doi.org/10.1049/el:19890728
Abstract
Silicon dioxide films of 300–400 Å in thickness have been deposited at 270°C by a new electron cyclotron resonant (ECR) microwave plasma enhanced chemical vapour deposition (PECVD) process. The electronic properties of the deposited films approach those of thermally grown silicon oxides with high stability.Keywords
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