Above-band-gap linear electro-optic coefficients of GaAs
- 15 September 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (6) , 3239-3241
- https://doi.org/10.1063/1.349309
Abstract
We report an easy way to obtain the linear electro-optic coefficients of zinc-blende crystals from experimental results of optical anisotropies. Above-band-gap linear electro-optic coefficients of GaAs (380–450 nm) are determined.This publication has 9 references indexed in Scilit:
- Electro-optic effects in the optical anisotropies of (001) GaAsPhysical Review B, 1989
- Measurements of above-bandgap optical anisotropies in the (0 0 1) surface of GaAsSolid State Communications, 1987
- Reflectance–difference spectroscopy of (110) GaAs and InPJournal of Vacuum Science & Technology A, 1987
- Intrinsic Surface-Induced Optical Anisotropies of Cubic Crystals: Local-Field EffectPhysical Review Letters, 1985
- Above-bandgap optical anisotropies in the reflectance spectra of some cubic semiconductorsJournal of Vacuum Science & Technology B, 1985
- Chemisorption-induced defects at interfaces on compound semiconductorsSurface Science, 1983
- Interband critical-point symmetry from electroreflectance spectraSurface Science, 1973
- Piezoelectric effects in electroreflectanceSolid State Communications, 1970
- Electro-optic and Piezoelectric Coefficients and Refractive Index of Gallium PhosphideJournal of Applied Physics, 1968