Hot-electron-induced MOSFET degradation at low temperatures
- 1 September 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (9) , 450-452
- https://doi.org/10.1109/edl.1985.26189
Abstract
The n-channel LDD MOSFET lifetime is observed to follow\tau=(A/I_{d})(I_{sub}/I_{d})^{-n}from 77 to 295 K when the device is stressed near the maximum Isub. Here Idis the drain current andAis the proportionality constant. The experimental result indicates thatnis approximately 2.7 and is independent of temperature. However, the proportionality constantAfollowsA = A_{0} \exp (-E_{a}/kT), withE_{a} = 39meV. The smaller proportionality constant at low temperatures suggests that hot-electron injection (HEI) degradation is caused by the electron trapping in the oxide.Keywords
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