High gain V-band heterojunction FET MMIC power amplifiers
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 379-382
- https://doi.org/10.1109/gaas.1993.394429
Abstract
High gain V-band medium power MMIC amplifiers have been successfully demonstrated using 0.15 /spl mu/m T-shaped gate AlGaAs/InGaAs heterojunction FETs. Optimization of the FET achieved high f/sub max/ of 227 GHz with high gate breakdown voltage of -13 V. A single-stage 65 GHz-band amplifier has exhibited 8.7 dB small signal gain with the 1 dB-gain-down bandwidth of 2 GHz. A single-stage 60 GHz-band amplifier has achieved 8.4 dB gain with 3 GHz bandwidth and good input and output impedance matching. The output power of 37.2 mW with high power-added-efficiency of 25.6% at 61.2 GHz has been obtained at 3 V drain bias.Keywords
This publication has 3 references indexed in Scilit:
- A 0.1-W W-band pseudomorphic HEMT MMIC power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Research activities on millimeter wave indoor communication systems in JapanPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- V-band high-efficiency monolithic pseudomorphic HEMT power amplifiersIEEE Microwave and Guided Wave Letters, 1992