Visible (660 nm) resonant cavity light-emitting diodes
- 18 February 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (4) , 328-329
- https://doi.org/10.1049/el:19930222
Abstract
The demonstration of the first visible resonant cavity light-emitting diodes (RCLEDs) is reported. The devices consist of an InAlGaP strained quantum well active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Linewidths from 0.9 nm (2.6 meV) to 45 nm (12.8 meV) were obtained by varying the cavity quality factor (Q).Keywords
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