Quasi-one-dimensional CaF2 islands formed on Si(001) by molecular beam epitaxy
- 22 April 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (17) , 2363-2365
- https://doi.org/10.1063/1.115859
Abstract
Quasi-one-dimensional CaF2 islands, 5–10 nm in both width and height and several μm in length, have been grown on Si(001) by molecular beam epitaxy. Using conventional and high resolution transmission electron microscopy we show that the islands grow in two symmetry-equivalent, {011} orientations and are bounded by {111} facets. The unusual island morphology is attributed to a low density of nucleation sites, the small lattice mismatch, and the anisotropic CaF2 surface energy.Keywords
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