A self-alignment process for amorphous silicon thin film transistors
- 1 July 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (7) , 187-189
- https://doi.org/10.1109/EDL.1982.25532
Abstract
A new method of fabricating amorphous Si thin film transistors (a-Si TFT's) has been developed. This method uses the self-alignment process, which also includes the successive deposition of gate insulator and active amorphous Si layers in one-pumpdown time in an RF glow discharge apparatus. This method greatly simplifies the fabrication process and results in stable device performance. The practicability of this method was confirmed by experimentally fabricated devices.Keywords
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