Noise in single injection diodes. II. Applications

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Abstract
The noise of single injection diodes of varying degrees of complexity is studied: the trap−free insulator, the trap−free semiconductor, structures with traps, and three−dimensional insulators. Where possible, results for hot as well as thermal carriers are derived. The one−dimensional results are consistently obtained with the transfer impedance method and the emphasis is on results valid in the entire characteristic [Ohmic, space−charge−limited (SCL), and mixed conduction]. Agreement with other work in limiting current regimes is generally observed. For devices with traps explicit new formulas for the trapping noise are obtained.