Intentional side etching to achieve low-noise GaAs f.e.t.
- 26 May 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (11) , 316-318
- https://doi.org/10.1049/el:19770231
Abstract
A very-low-noise 0.5 μm-gate GaAs f.e.t. is realised by using intentional side etching of an Au/Ti double layer as the Schottky-gate metal. At 12 GHz, the minimum noise figure is 2.1 dB, with 7.6 dB associated gain at a bias of VD = 4 V, ID= 10 mA. Maximum stable gain is 14 dB at VD = 4 V, ID = 30 mA.Keywords
This publication has 0 references indexed in Scilit: