ELECTROMIGRATION EFFECTS IN ALUMINUM FILM ON SILICON SUBSTRATES
- 1 August 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (3) , 85-87
- https://doi.org/10.1063/1.1755047
Abstract
A new nondestructive method is reported to investigate electromigration‐induced void formation in aluminum stripes on silicon substrates. X‐ray topography and optical microscopy are employed to characterize void nucleation at or below the film surface. Results are presented to show the correlation between x‐ray and optical images of void structures in an aluminum stripe after dc current flow.Keywords
This publication has 7 references indexed in Scilit:
- Search for reversal in copper electromigrationJournal of Physics and Chemistry of Solids, 1967
- Electromigration and soret effect in cobaltJournal of Physics and Chemistry of Solids, 1966
- Electromigration and void observation in silverJournal of Physics and Chemistry of Solids, 1966
- New X-Ray Diffraction Microscopy Technique for the Study of Imperfections in Semiconductor CrystalsJournal of Applied Physics, 1965
- Current-induced mass transport in aluminumJournal of Physics and Chemistry of Solids, 1964
- Current-induced marker motion in copperJournal of Physics and Chemistry of Solids, 1961
- Current-induced marker motion in gold wiresJournal of Physics and Chemistry of Solids, 1961