An experimental determination of the electrical resistivity of dislocations in aluminium

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Abstract
The increment in residual resistivity due to the introduction of a high and uniform concentration of prismatic dislocation loops in quenched aluminium has been measured. This measurement is correlated with a direct determination of loop density by transmission electron microscopy. The observations indicate that the average dislocation resistivity in aluminium is ρd=[7 ± 2] × 10−19 β ohm cm3 for a dislocation density of βcm−2. An approximate value of the vacancy resistivity, calculated from the observations, is ρv=[1•4 ± 0•3] × 10−6 ohm cm/atomic % vacancies.