Growth of GaP Crystals and p-n Junctions by a Traveling Solvent Method
- 1 June 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (6) , 1892-1894
- https://doi.org/10.1063/1.1713764
Abstract
A traveling solvent method has been used to grow GaP crystals from Ga solution. Growth rates of approximately 0.5 mm/h have been achieved at an average temperature as low as 850°C, from Ga zones 0.025 mm thick. Polycrystalline growth, 10 mm in diameter and 2 mm thick, has been achieved as a direct continuation of the crystal orientations in polycrystalline seeds. p‐n junction structures have been grown by doping from a 2% Ge‐Ga solvent zone. Some electrical characteristics of small diodes cut from polycrystalline crystals are described.This publication has 5 references indexed in Scilit:
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- THE ``DIRECT-INDIRECT'' TRANSITION IN Ga(As1−xPx) p-n JUNCTIONSApplied Physics Letters, 1963
- A New Method of GaP GrowthJournal of the Electrochemical Society, 1963
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- Germanium-Doped Gallium Arsenide Tunnel DiodesJournal of the Electrochemical Society, 1961