Secondary particle collection in ion implantation dose measurement
- 1 May 1978
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 49 (5) , 634-638
- https://doi.org/10.1063/1.1135473
Abstract
The measurement of ion implantation doses in the presence of secondary ions and electrons emitted from the target is discussed. A circuit and electrode geometry for obtaining accurate ion beam current measurements in the presence of both positive and negative secondary particles is presented.Keywords
This publication has 1 reference indexed in Scilit:
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969