Characterization of non-ohmic behavior of emitter contacts of bipolar transistors

1 July 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 5 (7) , 221-223
https://doi.org/10.1109/EDL.1984.25896

Abstract

Emitter contacts of bipolar transistors, with silicide or polysilicon contacts, are electrically characterized by analyzing the deviation of the base current at high currents from its ideal exponential behavior. A simple theory is presented that explains the deviation of the series voltage drop from ohmic behavior, observed in some of the devices with polysilicon emitter contact, in terms of an interface with tunneling properties.

Keywords

BIPOLAR TRANSISTORS
VOLTAGE
SILICIDES
CONTACT RESISTANCE
TUNNELING
SILICON
CURRENT MEASUREMENT
ELECTRICAL RESISTANCE MEASUREMENT
ELECTRIC VARIABLES MEASUREMENT
BIPOLAR INTEGRATED CIRCUITS

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