Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2
- 1 May 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 17 (3) , 741-748
- https://doi.org/10.1116/1.581643
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmasJournal of Vacuum Science & Technology A, 1998
- Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmasApplied Physics Letters, 1996
- Role of the chamber wall in low-pressure high-density etching plasmasJournal of Applied Physics, 1995
- Two-dimensional modeling of high plasma density inductively coupled sources for materials processingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Novel radio-frequency induction plasma processing techniquesJournal of Vacuum Science & Technology A, 1993
- Electromagnetic fields in a radio-frequency induction plasmaJournal of Vacuum Science & Technology A, 1993
- Langmuir probe measurements of a radio frequency induction plasmaJournal of Vacuum Science & Technology A, 1993
- Plasma-based dry etching techniques in the silicon integrated circuit technologyIBM Journal of Research and Development, 1992
- Surface analysis of realistic semiconductor microstructuresJournal of Vacuum Science & Technology A, 1989
- The design of plasma etchantsPlasma Chemistry and Plasma Processing, 1981