INTERFACE RELATED EMISSION FROM AN MBE-GROWN (Al, Ga) As HETEROSTRUCTURE
- 1 November 1987
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 48 (C5) , C5-127
- https://doi.org/10.1051/jphyscol:1987523
Abstract
We report the observation of a novel feature in the luminescence of an ultra-pure MBE-grown GaAs-Al0.33Ga0.67As heterostructure. This emission, centered at 1.510 eV, disappears on removing the top cladding Al0.33Ga0.67As layer, pointing to an important role of the heterointerface in the recombination mechanism leading to this novel band. From this perspective, we discuss the effect of several experimental parameters on the luminescent propertiesKeywords
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