Ge photocapacitive MIS infrared detectors
- 1 December 1979
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (12) , 7883-7886
- https://doi.org/10.1063/1.325979
Abstract
An undoped Ge photocapacitive detector is reported which has peak normalized detectivities D*λ at wavelengh 1.4 μm and chopping frequencies 13–103 Hz of 9×1012, 1×1012, 4×109 cm Hz1/2/W, operating respectively at temperatures 77, 195, and 295 °K. The observed temperature, spectral, and frequency response of the signal and noise are explained in terms of the measured space charge and interface state properties of the device.This publication has 4 references indexed in Scilit:
- LaF3 insulators for MIS structuresApplied Physics Letters, 1979
- Photocapacitive MIS infrared detectorsApplied Physics Letters, 1978
- Interface states on semiconductor/insulator surfacesC R C Critical Reviews in Solid State Sciences, 1976
- InSb MOS INFRARED DETECTORApplied Physics Letters, 1967