Rapid interpretation of the MOS-C C-t transient
- 1 September 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (9) , 1157-1159
- https://doi.org/10.1109/T-ED.1978.19241
Abstract
A procedure for rapidly and accurately deducing the generation lifetime from metal-oxide-semiconductor capacitorC-ttransient data is presented, explained, and illustrated.Keywords
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