Cross-sectional scanning tunneling microscopy of epitaxial GaAs structures

• 1 July 1993
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 11  (4) , 1502-1508
• https://doi.org/10.1116/1.586959

Abstract

Keywords

• BAND GAP
• GALLIUM ARSENIDE
• CROSS SECTION
• SCANNING TUNNELING MICROSCOPY
• SCANNING TUNNELING MICROSCOPE
• MATERIALS SCIENCE
• ELECTRONIC STRUCTURE
• ARSENIC