Molecular beam epitaxial growth of InGaAsSb on (100) GaSb with emission wavelength in the 2 to 2.5 μm range
- 1 January 1987
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 16 (1) , 57-61
- https://doi.org/10.1007/bf02667791
Abstract
No abstract availableKeywords
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