Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal-insulator-semiconductor field-effect transistors
- 1 March 1986
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 4 (2) , 622-624
- https://doi.org/10.1116/1.583393
Abstract
Calculations are shown to investigate the possibility of modulating the channel conductance of InSb field-effect transistors (FET’s) at 300 K. Molecular beam epitaxy (MBE) grown InSb metal-insulator-semiconductor field-effect transistors (MISFET’s) were successfully fabricated and exhibited room temperature operation.This publication has 0 references indexed in Scilit: