A study on solution (THM) grown Ti doped CdTe
- 1 January 1977
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 12 (2) , 203-204
- https://doi.org/10.1051/rphysap:01977001202020300
Abstract
The properties of cadmium telluride crystals doped with thallium have been investigated. This dopant was introduced during a THM growth process at 850 °C as T1Te, T15Te 3 or even as metallic thallium. Semi-insulating crystals (p-10 7 Ω. cm) have been obtained, but optical measurements have shown substantial precipitationKeywords
This publication has 2 references indexed in Scilit:
- Natural and forced convection during solution growth of CdTe by the Traveling Heater Method (THM)Journal of Crystal Growth, 1975
- Band edge emission properties of CdTeJournal of Physics and Chemistry of Solids, 1961