Lateral photoeffect in large area one-dimensional thin-film position-sensitive detectors based in a-Si:H P-I-N devices

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Abstract
The aim of this work is to provide the basis for the interpretation, under steady state conditions, of the lateral photoeffect in p‐i‐n a‐Si:H one‐dimensional thin‐film position‐sensitive detectors (1D TFPSD) and the determination of its linear spatial detection limits, function of the device, and light spot source characteristics. This leads to the development of a model, based on the application of the Poisson, continuity, and current density equations in the p‐i‐n junction, where two thin resistive layers, as equipotentials, are considered on both sides of the doped layers. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlations discussed.