Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors
- 23 February 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (9)
- https://doi.org/10.1063/1.1871351
Abstract
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This publication has 1 reference indexed in Scilit:
- Finite-element study of strain distribution in transistor with silicon–germanium source and drain regionsApplied Physics Letters, 2004