For optical networks in the 40 Gbit/s regime as well as in fiber-fed cellular microwave mobile communication systems high-speed optical receivers with high sensitivity are required. This work describes the development of GaInAs-AlInAs high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on metal-organic vapour phase epitaxy (MOVPE) layers. These devices are to be used in low-noise amplifier circuits as part of an optical receiver.