Metastability of the resonant Si level in Ga0.86Al0.14As
- 1 April 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (4) , 296-297
- https://doi.org/10.1088/0268-1242/4/4/035
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- A new model of deep donor centres in AlxGa1-xAsSemiconductor Science and Technology, 1987
- Comprehensive analysis of Si-doped (): Theory and experimentsPhysical Review B, 1984