A Review of the Electrical Properties of SIMOX Substrates and Their Impact on Device Performance

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Abstract
Recent results are discussed in relation to the electrical properties of thin SIMOX (separation by implantation of oxygen) films and the specific mode of operation of SOI transistors. Various sources of SIMOX contamination are described, including the formation of oxygen donors. Interface coupling effects are illustrated by experimental results of transconductance, subthreshold swing, charge pumping, and noise. It is shown that SIMOX offers the possibility of engineering the interface quality and achieving a variety of quantum transport effects. Parasitical edge‐induced and transient phenomena are described and used to characterize sidewall defects and carrier lifetime. Finally, hot carrier injection is found to substantially degrade the buried oxide interface.

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