Electron Relaxation Properties and Transient Spectroscopy of Hydrogenated Amorphous Silicon

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Abstract
The isothermal-capacitance-transient-spectroscopy (ICTS) and the deep-level-transient-spectroscopy (DLTS) data of a-Si:H are analyzed using a model based on the electronic relaxation theory of Ngai and coworkers. The electron capture and emission processes are taken into account in a selfconsistent manner, and are described by relaxation functions with the same fractional exponent, i.e., φ(t)αexp [-(t/τ*)1-λ], where λ=0.2 and τ* is energy dependent in both processes. This approach (i) explains the anomalous energy and temperature dependence of the effective relaxation rate obtained by the ICTS method and (ii) yields an explanation for the energy difference of the D- states between ICTS and DLTS measurements.