Comparison of data transfer rates of focused electron and ion beam nanometer lithography

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Abstract
Light ions such as protons incident on organic resists (polymethylmethacrylate) deposit their energy very efficiently in well‐defined volumes with no backscattering. These characteristics make protons the best medium for writing nanometer structures in the lithographic process. To write nanometer structures with focused electron beams the electrons must be accelerated to energies of 50 to 100 KeV where the interaction cross sections are very small and very large doses of electrons are needed and to avoid backscattering, thin‐film substrates have been used. We have taken the dosages of electrons and protons that investigators have found are necessary to write 10‐ and 30‐nm lines and using the characteristics of the very high brightnesssources that are now available with field emission electron beams and gaseous field ion beams of H+ 2 and calculated the data transfer rates for writing these nanometer structures. Focused protonion beamlithography gives data transfer rates two orders of magnitude faster than focused electron beams for writing 30‐nm pixels; 1.6×108 Hz for protons versus 3.0×106 Hz for electrons.

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