Detectivity and Preamplifier Considerations for Indium Antimonide Photovoltaic Detectors
- 1 September 1959
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 47 (9) , 1524-1529
- https://doi.org/10.1109/jrproc.1959.287055
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Theory and Experiments on Shot Noise in Silicon P-N Junction Diodes and TransistorsProceedings of the IRE, 1959
- The Evolution of the Theory for the Voltage-Current Characteristic of P-N JunctionsProceedings of the IRE, 1958
- Noise in Junction TransistorsProceedings of the IRE, 1958
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957