Low permittivity dielectrics and global planarization for quarter-micron multilevel interconnections
- 31 July 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (7) , 1005-1011
- https://doi.org/10.1016/s0038-1101(97)00014-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Phosphosilicate Glass Passivation for ULSI Cu MetallizationJournal of the Electrochemical Society, 1992
- Multilevel metal capacitance models for CAD design synthesis systemsIEEE Electron Device Letters, 1992
- Application of Surface Reformed Thick Spin‐on‐Glass to MOS Device PlanarizationJournal of the Electrochemical Society, 1990
- Water-related degradation of contacts in the multilevel MOS IC with spin-on glasses as interlevel dielectricsIEEE Electron Device Letters, 1989