Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride
- 1 January 2001
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 65 (1-4) , 585-591
- https://doi.org/10.1016/s0927-0248(00)00145-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductorsJournal of Applied Physics, 1999
- Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor depositionJournal of Applied Physics, 1999
- Optimization and characterization of remote plasma-enhanced chemical vapor deposition silicon nitride for the passivation of p-type crystalline silicon surfacesJournal of Vacuum Science & Technology A, 1998
- Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafersJournal of Applied Physics, 1997
- Progress in Low-temperature Surface Passivation of Silicon Solar Cells using Remote-plasma Silicon NitrideProgress In Photovoltaics, 1997
- Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance dataApplied Physics Letters, 1996
- Low temperature surface passivation for silicon solar cellsSolar Energy Materials and Solar Cells, 1996
- Record low surface recombination velocities on low-resistivity silicon solar cell substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996