Vacuum Deposited Molybdenum Films

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Abstract
Vacuum evaporation of molybdenum with an electron bombardment source on oxidized silicon wafers produces films whose properties depend on the condensation temperature. At 600°C or above, the films have resistivities comparable to molybdenum wire, satisfactory adhesion, and tolerable stress. They are potentially useful as interconnections for silicon devices and monolithic circuits. All films are polycrystalline with (110) fiber texture. Other crystallite orientations appear above 500°C, while simultaneously the intrinsic film stress becomes decreasingly tensile and, at 625°C, compressive. Film stress and preferred orientation are considered to result from the interaction of lattice defects during the entire growth process and not merely from lattice distortions at the film substrate interface.

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