AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3S) , 1552
- https://doi.org/10.1143/jjap.37.1552
Abstract
The AlGaAs/GaAs laser diodes with the self-formed GaAs islands active regions on the Si substrates, showed a threshold current (I th) of 260 mA, a threshold current density (J th) of 5.4 kA/cm2 and a lasing wavelength of 791 nm with the full width at half-maximum (FWHM) of 2.8 nm under pulsed condition at 300 K and an I th of 110 mA, a J th of 3.9 kA/cm2 and a lasing wavelength of 771 nm with the FWHM of 1.8 nm under a continuous-wave condition at 100 K. The self-formed GaAs islands on Si, grown by the droplet epitaxy, exhibited a conical shape with heights of 8 nm and effective diameters of 300 nm. Compared with the conventional quantum well laser diode on Si, the self-formed laser diode on Si exhibited an improved reliability due to the reduction of the dislocation number in the active region.Keywords
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