InGaAlAs/InAlAs multiquantum well electroabsorptionphasemodulator module
- 13 October 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (21) , 1795-1796
- https://doi.org/10.1049/el:19941229
Abstract
A newly fabricated InGaAlAs/lnAlAs multiquantum well (MQW) waveguide phase modulator module is reported. A low connector-connector insertion loss of 7.98 dB is obtained together with a wide modulation bandwidth of over 18 GHz by employing an aspherical lens and tapered microstripline. The π-driving voltage at 1.55 µm is 2.8 V for TE polarised light and the accompanying residual intensity modulation is 3.6 dB.Keywords
This publication has 2 references indexed in Scilit:
- InGaAsP electroabsorption modulator for high-bit-rate EDFA systemIEEE Photonics Technology Letters, 1992
- High-speed InGaAlAs/InAlAs multiple quantum well electrooptic phase modulators with bandwidth in excess of 20 GHzIEEE Photonics Technology Letters, 1992