Investigation of orientation effect on contact resistance in selectively doped AlGaAs/GaAs heterostructures
- 10 November 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (19) , 1263-1265
- https://doi.org/10.1063/1.97381
Abstract
We established that the contact resistance to the two‐dimensional electron gas (2DEG) in selectively doped n‐AlGaAs/GaAs heterostructure is crystal orientation dependent. The contact resistance in the [011] direction is the lowest and that in the [01̄1] direction is the highest. The contact resistance monotonically changes between the [011] and [01̄1] directions. We also find the sheet resistance dependence of the contact resistance.Keywords
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