Development of 256x256 GaN ultraviolet imaging arrays

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Abstract
We have successfully developed a prototype 256 X 256 photoconductive GaN ultraviolet (UV) imaging array. The array, with its pixels (30 X 30 micrometer2) indium bump bonded to a Lockheed Martin Fairchild Systems LT9601 readout integrated circuit, is highly sensitive to ultraviolet light below 365 nm with a sharp reduction in response to visible and infrared light. The array was installed into a custom designed UV camera utilizing a Nikon UV lens with all the off-chip electronics interfaced to an automatic computer controlled system. To the best of our knowledge, this is the first reported UV array camera based on the nitride materials.

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