Positron binding energies and specific trapping rates for monovacancies in GaAs and InSb

Positron measurements on as-grown GaAs and InSb in the temperature range 30–800 K have resulted in an experimental determination of the positron binding energies and absolute specific trapping rate for monovacancies. In the case of GaAs the binding energy is found to be 0.30±0.02 eV and the absolute specific trapping rate to be (1.0±0.2)×${10}^{\mathrm{-}17}$ ${\mathrm{ns}}^{\mathrm{-}1}$ ${\mathrm{cm}}^3$. In the case of InSb the binding energy is constant (0.28±0.02 eV) below ∼540 K but increases to 0.60±0.05 eV close to the melting point (823 K).