I n s i t u stress measurements during thermal oxidation of silicon

• 1 March 1989
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B
• Vol. 7  (2) , 163-166
• https://doi.org/10.1116/1.584709

Abstract

Keywords

• MEASUREMENT
• OXIDATION
• SILICON
• INTERFACES
• THERMOCHEMISTRY
• CURVATURE
• FILMS
• TEMPERATURE