Characterization of a 400-GHz SiGe HBT technology for low-power D-Band transceiver applications
- 1 June 2012
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 0149645X,p. 1-3
- https://doi.org/10.1109/mwsym.2012.6259705
Abstract
This paper describes a methodology for extracting the HICUM/L0 model of a 400-GHz SiGe HBT in the presence of strong self-heating. Good agreement is observed between measurements and simulations for DC characteristics, f T , f MAX , and Y parameters in a wide range of frequencies (DC to 170 GHz) and bias conditions. The low power capability of this process is demonstrated in a fundamental frequency 139–150 GHz VCO+16∶1 prescaler consuming less than 99 mW when operated from a 1.5V supply.Keywords
This publication has 2 references indexed in Scilit:
- A Fundamental Frequency 120-GHz SiGe BiCMOS Distance Sensor With Integrated AntennaIEEE Transactions on Microwave Theory and Techniques, 2012
- A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulationIEEE Transactions on Electron Devices, 2006