Luminescence properties of erbium in III–V compound semiconductors
- 31 July 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (7) , 1285-1293
- https://doi.org/10.1016/0038-1101(94)00286-o
Abstract
No abstract availableThis publication has 33 references indexed in Scilit:
- Symmetry properties of Er3+ related centers in In1−xGaxP with low alloy compositionsApplied Physics Letters, 1992
- Optical studies of erbium excited states in Ga0.55Al0.45AsApplied Physics Letters, 1992
- An over 2200-km coherent transmission experiment at 2.5 Gb/s using erbium-doped-fiber in-line amplifiersJournal of Lightwave Technology, 1991
- Long-distance soliton propagation using lumped amplifiers and dispersion shifted fiberJournal of Lightwave Technology, 1991
- Erbium-doped fiber amplifier cascade for multichannel coherent optical transmissionJournal of Lightwave Technology, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- High-gain erbium-doped traveling-wave fiber amplifierOptics Letters, 1987
- Fabrication and characterization of low-loss optical fibers containing rare-earth ionsJournal of Lightwave Technology, 1986
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983
- Proposed Fiber Cavities for Optical MasersJournal of Applied Physics, 1961