Physics-based RF noise modeling of submicron MOSFETs
- 1 January 1998
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. ed 41, 81-84
- https://doi.org/10.1109/iedm.1998.746282
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- An efficient approach to noise analysis through multidimensional physics-based modelsIEEE Transactions on Electron Devices, 1998
- A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulationIEEE Transactions on Electron Devices, 1997
- High-field diffusivity and noise spectra in GaAs MESFETsJournal of Physics D: Applied Physics, 1994