Electron tunneling at Al-SiO2 interfaces
- 1 April 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (4) , 2897-2908
- https://doi.org/10.1063/1.329024
Abstract
The Murphy-Good tunneling theory, modified with a Franz-type two-band dispersion relation, accurately represents emission of electrons from metals into SiO2 using parameters that are invariant with temperature and that agree with independent measurements. Parameters related to properties of the SiO2 do not change when different metal electrodes are used. Deviations of the measured I-V characteristic from the model calculation which occur at low field can be explained in terms of interfacial inhomogeneities in the effective barrier height. For thin dry SiO2 grown on boron-dope silicon, the effective size of the inhomogeneities increases with decreasing oxidation temperature.This publication has 27 references indexed in Scilit:
- Photon assisted tunneling from aluminum into silicon dioxideSolid State Communications, 1976
- Impact ionization and positive charge in thin SiO2 filmsJournal of Applied Physics, 1976
- Tunneling in thin MOS structuresJournal of Vacuum Science and Technology, 1974
- D.c conduction in sio2 films at elevated temperaturesJournal of Electronic Materials, 1972
- Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1972
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969
- Single carrier transport in thin dielectric filmsThin Solid Films, 1967
- Electron current through metal-insulator-metal sandwichesSolid-State Electronics, 1964
- Thermionic Emission, Field Emission, and the Transition RegionPhysical Review B, 1956
- Electron emission in intense electric fieldsProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1928