Characterisation of deep level trap centres in 6H-SiC p-n junction diodes
- 1 December 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 66 (1) , 106-110
- https://doi.org/10.1016/s0921-5107(99)00116-6
Abstract
No abstract availableKeywords
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