A diffusion model for indium in Hg1−xCdxTe

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Abstract
A model based on the known defect structure of Hg1−xCdxTe has been developed for explaining indium diffusion in this semiconductor. Based on a charged‐vacancy mechanism, the model qualitatively predicts the correct trends for diffused samples which have been electroplated with indium. The diffusion coefficient predicted by the model has a weak mercury partial pressure dependence but a concentration dependence which increases linearly with the indium concentration. This is in agreement with published experimental results. In addition, the model also qualitatively explains why only a small fraction of the indium is ionized without resorting to the current explanation that the unionized portion is tied up as indium telluride (In2Te3).

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