In situ mass spectrometric investigation of metallised InP samples during annealing
- 3 February 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (3) , 117-118
- https://doi.org/10.1049/el:19830083
Abstract
In situ mass spectrometry was used to study the interaction of the metal-InP system. In the presence of a thin gold layer on the crystal surface the phosphorus yield showed characteristical peak against temperature with a relatively high rate of evaporation. Contact systems containing gallium and indium were also investigated. A thin Ga layer deposited into the gold film eliminated the characteristical phosphorus losses.Keywords
This publication has 0 references indexed in Scilit: