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Properties of Sn-Doped Indium Oxide Prepared by High Rate and Low Temperature RF Sputtering
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Properties of Sn-Doped Indium Oxide Prepared by High Rate and Low Temperature RF Sputtering
Properties of Sn-Doped Indium Oxide Prepared by High Rate and Low Temperature RF Sputtering
KI
Kuniyoshi Itoyama
Kuniyoshi Itoyama
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1 July 1978
journal article
Published by
IOP Publishing
in
Japanese Journal of Applied Physics
Vol. 17
(7)
,
1191-1196
https://doi.org/10.1143/jjap.17.1191
Abstract
No abstract available
Keywords
SN DOPED
DOPED INDIUM
TEMPERATURE RF
OXIDE PREPARED
RF SPUTTERING
LOW TEMPERATURE
INDIUM OXIDE
HIGH RATE
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Cited by 21 articles
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