A corrugated capacitor cell (CCC) for megabit dynamic MOS memories

1 April 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 4 (4) , 90-91
https://doi.org/10.1109/EDL.1983.25659

Abstract

A new dRAM cell named "CCC" (Corrugated Capacitor Cell) has been successfully developed based on the one-device cell concept. This CCC is characterized by an etched-moat storage-capacitor extended into the substrate, resulting in an almost independent increase in storage capacitance without cell size enlargement. A typical value of 45 fF has been obtained with 4 × 8 µm2CCC having a 2.5-µm deep moat and a capacitor insulator equivalent to 15 nm SiO2in thickness. A signal of 200 mV is realized in 32 kbit dRAM operation with a folded-bit line arrangement having 128 bit identical CCC's. The CCC concept is promising for generations of 1 Mbit dRAM's and beyond.

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