Shallow and Deep Donor Levels in S-Doped Ga0.52In0.48P Grown by Chloride VPE
- 1 March 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (3A) , L191-193
- https://doi.org/10.1143/jjap.25.l191
Abstract
Electrical properties were studied for S-doped Ga0.52In0.48P grown by chloride vapor-phase epitaxy over a wide carrier concentration ranging 1×1015–4×1018 cm-3 using Hall effect measurements. Persistent Photoconductivity caused by the deep level was observed, and was used for an approximate estimation of the deep donor concentration. It was deduced that some of the doped donor atoms form the deep level. The ionization energies of shallow and deep-donor levels were estimated from temperature dependence of carrier concentrations.Keywords
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